Email: wojciech.linhart@pwr.edu.pl

Jednostka: Wydział Podstawowych Problemów Techniki » Katedra Inżynierii Materiałów Półprzewodnikowych

Wybrzeże Wyspiańskiego 27, Wrocław
bud. A-1, pok. 207 E
tel. 71 320 4647

Konsultacje

• Poniedziałek 13:00-15:00

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Zainteresowania naukowe

• Spektroskopia optyczna; spektroskopia XPS i UPS; fizyka półprzewodników.

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Najważniejsze publikacje z ostatnich lat

2021

• W. M. Linhart, S. J. Zelewski, P. Scharoch, F. Dybała, R. Kudrawiec, "Nesting-like band gap in bismuth sulfide Bi2S3, Journal of Materials Chemistry C, 9, 13733

2020

• Jones L.A.H, Linhart W.M., Fleck N., Swallow J.E.N., Murgatroyd P.A.E, Shiel H., Featherstone T. J, Smiles M.J., Thakur P.K., Lee T.-L., Hardwick L.J., Alaria J., Jäckel F., Kudrawiec R., Burton L.A., Walsh A., Skelton J.M., Veal T.D., Dhanak V.R., Sn 5s2 lone pairs and the electronic structure of tin sulphides: A photoreflectance, high-energy photoemission, and theoretical investigation, Physical Review Materials, 4, 074602
• Rogowicz E., Linhart W. M., Syperek M., Kopaczek J., Delorme O., Cerutti L., Luna E., Tournié E., Rodriguez J.-B., Kudrawiec R., Optical properties and dynamics of excitons in Ga (Sb, Bi)/GaSb quantum wells: evidence for a regular alloy behavior, Semiconductor Science and Technology, 35, 025024

2019

• Occena J., Jen Y., Mitchell J.W., Linhart W.M, Pavelescu E.-M., Kudrawiec R., Wang Y.Q., Goldman R.S.,Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys, Applied Physics Letters 115 (8), 082106
• Linhart W.M, Rajpalke M.K., Birkett M., Walker D., Ashwin M.J., Veal T.D., Nitrogen pair-induced temperature insensitivity of the band gap of GaNSb alloys, Journal of Physics D: Applied Physics 52, 045105

2018

• Birkett M., Linhart W.M., Stoner J., Phillips L. J., Durose K., Alaria J., Major J. D., Kudrawiec R., Veal, T.D., Band gap temperature-dependence of close-space sublimation grown Sb2Se3 by photo-reflectance, APL Materials 6 (8), 084901
• Linhart W.M., Zelewski S.J., Ishikawa F., Shimomura S., Kudrawiec R., Dilute Bismide Nanowires, Chapter 5 in book ”Novel Compound Semiconductor Nanowires: Materials, Devices, and Applications” Pan Stanford Publishing Pte Ltd.
• Li H., Alradhi H., Jin Z., Anyebe E.A., Sanchez A.M., Linhart W.M., Kudrawiec R., Fang H., Wang Z., Hu W., Zhuang Q., Novel Type-II InAs/AlSb Core–Shell Nanowires and Their Enhanced Negative Photocurrent for Efficient Photodetection, Advanced Functional Materials 28, 1705382.

2017

• Linhart W.M., Gladysiewicz M., Kopaczek J., Rajpalke M.K., Ashwin M.J., Veal T.D., Kudrawiec R., Photoluminescence of GaInSbBi quaternary alloys, Journal of Physics D: Applied Physics 50, 375102.

2016

• Linhart W.M., Rajpalke M.K., Buckeridge J., Murgatroyd P.A.E., Bomphrey J.J., Alaria J., Catlow C.R.A., Scanlon D.O., Ashwin M.J., Veal T.D., Band gap reduction in InN(x)Sb(1-x) alloys: Optical absorption, k · P modeling, and density functional theory, Applied Physics Letters 109, 132104.
• Speckbacher M., Treu J., Whittles T.J., Linhart W.M., Xu X., Saller K., Dhanak V.R., Abstreiter G., Finley J.J., Veal T.D., Koblmueller G., Direct measurements of Fermi level pinning at the surface of intrinsically n-type InGaAs nanowires, Nano Letters 16, 5135.

2015

• Veal T.D., Feldberg N., Quackenbush N.F., Linhart W.M., Wangoh L.W., Scanlon D.O., Piper L.F.J. and Durbin S.M., Band gap dependence on cation disorder in ZnSnN2, Advanced Energy Materials 5, 1501462.

Publikacje w bazie DONA