| Wybrane publikacje |
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| 1 | Artykuł 2024
Mateusz Gramala, Andrzej Sikora, Aleksandra Chudzyńska, Łukasz Gelczuk, Filip Dybała, Paweł Modrzyński, Robert Kudrawiec,| Highly conductive paths in diamond and their application in high pressure measurements. ACS Applied Materials and Interfaces. 2024, vol. 16, nr 43, s. 59528-59535. ISSN: 1944-8244; 1944-8252 | | Zasoby:DOIURLSFX |     |
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| 2 | Artykuł 2024
Łukasz Gelczuk, Jan K Kopaczek, Damian Pucicki, Robert D Richards, Robert Kudrawiec,| Effects of rapid thermal annealing on deep-level defects and optical properties of n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature. Materials Science in Semiconductor Processing. 2024, vol. 169, art. 107888, s. 1-10. ISSN: 1369-8001; 1873-4081 | | Zasoby:DOIURLSFX | |
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| 3 | Artykuł 2022
Jun Young Kim, Łukasz Gelczuk, Maciej P Polak, Daria Hlushchenko, Dane Morgan, Robert Kudrawiec, Izabela Szlufarska,| Experimental and theoretical studies of native deep-level defects in transition metal dichalcogenides. npj 2D Materials and Applications. 2022, vol. 6, art. 75, s. 1-11. ISSN: 2397-7132 | | Zasoby:DOIURLSFX | |
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| 4 | Artykuł 2020
Łukasz Gelczuk, Jan K Kopaczek, Paweł Scharoch, Katarzyna Komorowska, Mark Blei, Sefaattin Tongay, Robert Kudrawiec,| Probing defects in MoS2 van der Waals crystal through deep‐level transient spectroscopy. Physica Status Solidi-Rapid Research Letters. 2020, vol. 14, nr 12, art. 2000381, s. 1-6. ISSN: 1862-6254; 1862-6270 | | Zasoby:DOISFX | |
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| 5 | Artykuł 2020
Łukasz Gelczuk, Maria Dąbrowska-Szata, Vladimir Kolkovsky, Mariusz Sochacki, Jan Szmidt, Teodor Gotszalk,| Origin and anomalous behavior of dominant defects in 4H-SiC studied by conventional and Laplace deep level transient spectroscopy. Journal of Applied Physics. 2020, vol. 127, nr 6, art. 064503, s. 1-6. ISSN: 0021-8979; 1089-7550 | | Zasoby:DOISFX | |
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| 6 | Artykuł 2017
Łukasz Gelczuk, Jan K Kopaczek, Robert D Richards, Robert Kudrawiec,| Deep-level defects in n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature and their influence on optical properties. Scientific Reports. 2017, vol. 7, art. 12824, s. 1-11. ISSN: 2045-2322 | | Zasoby:DOISFX | |
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| 7 | Artykuł 2017
Łukasz Gelczuk, Grzegorz Jóźwiak, Magdalena Moczała, Piotr Dłużewski, Maria Dąbrowska-Szata, Teodor Gotszalk,| Strain relaxation induced surface morphology of heterogeneous GaInNAs layers grown on GaAs substrate. Journal of Crystal Growth. 2017, vol. 470, s. 108-112. ISSN: 0022-0248 | | Zasoby:DOISFX | |
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| 8 | Artykuł 2016
Łukasz Gelczuk, Maria Dąbrowska-Szata, Beata Ściana, Damian Pucicki, Damian Radziewicz, Krzysztof Kopalko, Marek Tłaczała,| Characterization of deep-level defects in GaNAs/GaAs heterostructures grown by APMOVPE. Materials Science-Poland. 2016, vol. 34, nr 4, s. 726-734. ISSN: 2083-1331; 2083-134X | | Zasoby:DOISFX | |
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| 9 | Artykuł 2016
Łukasz Gelczuk, Hubert Stokowski, Maria Dąbrowska-Szata, Robert Kudrawiec,| Origin and annealing of deep-level defects in GaNAs grown by metalorganic vapor phase epitaxy. Journal of Applied Physics. 2016, vol. 119, nr 18, art. 185706, s. 1-8. ISSN: 0021-8979 | | Zasoby:DOISFX | |
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| 10 | Artykuł 2016
Łukasz Gelczuk, Hubert Stokowski, Jan K Kopaczek, Liyao Zhang, Yaoyao Li, Kai Wang, Peng Wang, Shumin Wang, Robert Kudrawiec,| Bi-induced acceptor level responsible for partial compensation of native free electron density in InP1 − xBix dilute bismide alloys. Journal of Physics D-Applied Physics. 2016, vol. 49, nr 11, art. 115107, s. 1-6. ISSN: 0022-3727 | | Zasoby:DOISFX | |
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